Description
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General Specifications about Solar Wafer |
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Types of Solar Wafers: |
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Monocrystalline: |
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Cut from a single, continuous crystal of silicon, offering higher efficiency due to a uniform crystal structure. |
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Polycrystalline: |
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Made from multiple silicon crystals, generally less expensive but with slightly lower efficiency. |
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Common Wafer Sizes: |
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156.75mm x 156.75mm (M2): |
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A widely used size, but some manufacturers are transitioning to larger formats. |
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158.75mm x 158.75mm (G1): |
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A popular size due to compatibility with existing module designs. |
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166mm x 166mm (M6): |
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A larger wafer size, gaining traction in the market. |
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182mm x 182mm (M10): |
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Another larger format, offering higher power output. |
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210mm x 210mm (G12): |
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A large format wafer designed for increased power generation and system efficiency. |
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Key Specifications: |
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Material: Monocrystalline or Polycrystalline silicon. |
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Size: Can range from 156mm to 210mm (or larger). |
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Thickness: Typically, around 150-200 micrometers (µm). |
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Resistivity: Measured in ohm-centimeters (Ω·cm), typically between 0.4 and 2.0 Ω·cm. |
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Lifetime: Minority carrier lifetime, measured in microseconds (µs), affects cell efficiency. |
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Oxygen and Carbon Concentration: Impurity levels that can impact performance. |
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Orientation: Crystalline orientation, often <100> ±3°. |
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TTV (Total Thickness Variation): Measures thickness uniformity. |
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Saw Mark Depth: Indicates the quality of the cutting process. |
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Warp and Bow: Measures flatness, with lower values indicating better quality. |
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Wafer properties: |
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Made of pure silicon (either monocrystalline or polycrystalline). |
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Its thickness is typically between 120 and 200 micrometers. |
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It is electrically and optically processed to convert sunlight into electrical current. |
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Note: Wafer technologies have evolved in recent years to become thinner and more efficient, helping improve solar panel performance and reduce production costs |
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These specifications may vary slightly depending on the manufacturer, customer requirements, and cell design (e.g., PERC, TOPCon, HJT). |
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Typical Specification of Monocrystalline Silicon Solar Wafers |
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Parameter |
Specification |
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Material |
Monocrystalline Silicon |
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Crystal Orientation |
⟨100⟩ or ⟨111⟩ |
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Doping Type |
p-type (Boron) or n-type (Phosphorus) |
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Resistivity |
0.5 – 3 Ω·cm (for p-type) or 1 – 10 Ω·cm (n-type) |
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Wafer Size |
156.75 mm × 156.75 mm (6-inch standard) |
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Wafer Thickness |
160 – 180 μm |
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Surface Texture |
Pyramidal (acid or alkali etched) |
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Edge |
Rounded corners (pseudo-square shape) |
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TTV (Total Thickness Variation) |
< 20 μm |
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Saw Damage |
Removed (via surface etching) |
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Lifetime (Minority Carrier) |
> 1 μs (depends on quality grade) |
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Oxygen Content |
< 1e18 atoms/cm³ |
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Carbon Content |
< 5e17 atoms/cm³ |
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Warp/Bow |
< 20 μm |
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Examples of specifications for some types of Solar Wafers |
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P Type 210 (Size: 210±0.25mm) |
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KEY FEATURES |
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– Mature process matched with advanced equipment |
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– Customizable, fast delivery to meet customer needs |
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– Low attenuation process |
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Material properties |
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Item(unit) |
Specification |
Inspection method |
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Conductivity Type |
P |
PN testing machine |
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Dopant |
Gallium |
/ |
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Crystallinity |
Monocrystalline |
Preferential etch techniques (ASTM F47-88) |
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Etch pit density (dislocation density) |
<500cm-2 |
Preferential etch techniques (ASTM F47-88) |
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Surface orientation |
<100>±3° |
X-ray diffraction method |
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Side orientation |
<010>, <001>±3° |
X-ray diffraction method |
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Oxygen contents (ppma) |
≤16 |
FTIR (ASTM F121-83) |
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Carbon contents (ppma) |
≤1 |
FTIR (ASTM F123-91) |
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Electrical properties |
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Item(unit) |
Specification |
Inspection method |
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Lifetime (us) |
70 |
BCT-400 |
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Resistivity (Q. cm) |
0.4-1.1 |
Automatic sorting machine |
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Rule of geometry properties |
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Item(unit) |
Specification |
Inspection method |
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Geometry |
Quasi square |
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Bevel edge shape |
Right Angle |
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Square length (mm) |
210±0.25mm |
Automatic sorting machine |
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Diagonal length (mm) |
295±0.25mm |
Automatic sorting machine |
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Chamfer length projection (mm) |
1.41±0.5mm |
Automatic sorting machine |
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Verticality |
90±0.150° |
Automatic sorting machine |
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Thickness（μm） |
155 + 10/ – 10 |
Automatic sorting machine |
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Appearance Quality |
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Item(unit) |
Specification |
Inspection method |
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Surface quality |
No visual defects |
Automatic sorting machine |
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Chipping |
No visual defects, No bright line Depth<0.3mm, Length <0.5mm; Count < 2/pcs, no V-chip |
Automatic sorting machine |
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Saw mark (μm) |
≤15 |
Automatic sorting machine |
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Warpage（μm） |
≤40 |
Automatic sorting machine |
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TTV（μm） |
≤25 |
Automatic sorting machine |
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Micro cracks / Holes |
None |
Automatic sorting machine |
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Unfilled corner |
None |
Automatic sorting machine |
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N Type 210 (Size: 210±0.25mm) |
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KEY FEATURES |
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– Low Oxygen Large Heat Field Process |
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– High-efficiency wafers that match customers’ differentiated needs |
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– Adequate capacity reserves |
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Material properties |
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Item(unit) |
Specification |
Inspection method |
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Conductivity Type |
N |
PN testing machine |
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Dopant |
Phosphorus |
/ |
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Crystallinity |
Monocrystalline |
Preferential etch techniques (ASTM F47-88) |
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Etch pit density (dislocation density) |
<500cm-2 |
Preferential etch techniques (ASTM F47-88) |
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Surface orientation |
<100>±3° |
X-ray diffraction method |
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Side orientation |
<010>, <001>±3° |
X-ray diffraction method |
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Oxygen contents (ppma) |
≤12 |
FTIR (ASTM F121-83) |
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Carbon contents (ppma) |
≤1 |
FTIR (ASTM F123-91) |
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Electrical properties |
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Item(unit) |
Specification |
Inspection method |
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Lifetime (us) |
>800 |
BCT-400 |
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Resistivity (Q. cm) |
0.3-2.1 |
Automatic sorting machine |
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Rule of geometry properties |
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Item(unit) |
Specification |
Inspection method |
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Geometry |
Quasi square |
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Bevel edge shape |
Right Angle |
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Square length (mm) |
210±0.25mm |
Automatic sorting machine |
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Diagonal length (mm) |
295±0.25mm |
Automatic sorting machine |
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Chamfer length projection (mm) |
1.41±0.5mm |
Automatic sorting machine |
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Verticality |
90±0.150° |
Automatic sorting machine |
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Thickness（μm） |
130 + 10/ – 10 |
Automatic sorting machine |
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Appearance Quality |
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Item(unit) |
Specification |
Inspection method |
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Surface quality |
No visual defects |
Automatic sorting machine |
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Chipping |
No visual defects, No bright line Depth<0.3mm, Length <0.5mm; Count < 2/pcs, no V-chip |
Automatic sorting machine |
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Saw mark (μm) |
≤15 |
Automatic sorting machine |
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Warpage（μm） |
≤40 |
Automatic sorting machine |
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TTV（μm） |
≤25 |
Automatic sorting machine |
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Micro cracks / Holes |
None |
Automatic sorting machine |
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Unfilled corner |
None |
Automatic sorting machine |
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N Type 210 (Size: 182*183.75±0.25mm) |
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KEY FEATURES |
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– Low Oxygen Large Heat Field Process |
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– High-efficiency wafers that match customers’ differentiated needs |
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– Adequate capacity reserves |
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Material properties |
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Item(unit) |
Specification |
Inspection method |
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Conductivity Type |
N |
PN testing machine |
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Dopant |
Phosphorus |
/ |
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Crystallinity |
Monocrystalline |
Preferential etch techniques (ASTM F47-88) |
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Etch pit density (dislocation density) |
<500cm-2 |
Preferential etch techniques (ASTM F47-88) |
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Surface orientation |
<100>±3° |
X-ray diffraction method |
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Side orientation |
<010>, <001>±3° |
X-ray diffraction method |
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Oxygen contents (ppma) |
≤12 |
FTIR (ASTM F121-83) |
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Carbon contents (ppma) |
≤1 |
FTIR (ASTM F123-91) |
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Electrical properties |
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Item(unit) |
Specification |
Inspection method |
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Lifetime (us) |
>800 |
BCT-400 |
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Resistivity (Q. cm) |
0.3-2.1 |
Automatic sorting machine |
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Rule of geometry properties |
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Item(unit) |
Specification |
Inspection method |
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Geometry |
Quasi square |
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Bevel edge shape |
Right Angle |
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Square length (mm) |
182 / 183.75±0.25mm |
Automatic sorting machine |
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Diagonal length (mm) |
247±0.25mm |
Automatic sorting machine |
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Chamfer length projection (mm) |
7.51±0.5mm |
Automatic sorting machine |
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Verticality |
90±0.15° |
Automatic sorting machine |
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Thickness（μm） |
130 + 10/ – 10 |
Automatic sorting machine |
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Appearance Quality |
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Item(unit) |
Specification |
Inspection method |
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Surface quality |
No visual defects |
Automatic sorting machine |
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Chipping |
No visual defects, No bright line Depth<0.3mm, Length <0.5mm; Count < 2/pcs, no V-chip |
Automatic sorting machine |
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Saw mark (μm) |
≤15 |
Automatic sorting machine |
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Warpage（μm） |
≤40 |
Automatic sorting machine |
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TTV（μm） |
≤25 |
Automatic sorting machine |
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Micro cracks / Holes |
None |
Automatic sorting machine |
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Unfilled corner |
None |
Automatic sorting machine |
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Comparison Between |
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Feature |
Monocrystalline Silicon |
Polycrystalline Silicon |
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Crystal Structure |
Single, continuous crystal structure |
Multiple silicon crystals fused together |
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Color |
Dark black or deep blue with rounded edges |
Light to medium blue with square edges |
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Efficiency |
Higher (typically 18–23%) |
Lower (typically 15–18%) |
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Performance in Low Light |
Better |
Moderate |
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Temperature Tolerance |
Better performance at high temperatures |
Slightly more affected by heat |
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Material Waste in Production |
More waste due to precise cutting of cylindrical ingots |
Less waste, simpler cutting from blocks |
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Lifespan |
25+ years (same as poly, but retains performance better) |
25+ years |
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Cost |
Higher |
Lower |
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Space Efficiency |
More power per square meter (ideal for limited roof space) |
Less efficient use of space |
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Common Applications |
Residential rooftops, commercial systems, space-constrained areas |
Utility-scale, cost-sensitive projects |
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