PERC Solar Cell Detailed Specifications

Overview

— PERC is a mature and widely used technology in monocrystalline silicon solar cells. It improves on standard cells by adding rear-surface passivation and better light trapping.

— Key features include a rear passivation layer (often dielectric), local back surface field (LBSF), anti-reflection coatings, finer metallization, and multi-busbar designs to reduce resistive losses.

—  It balances relatively high efficiency with cost-effectiveness.

Efficiency Records & Typical Performance

Parameter

Value / Example

Record Efficiency

~ 24.5 % achieved by Trina Solar for 210 mm × 210 mm P-type mono-PERC cell.

Industrial Batch Efficiencies

~ 23.5-24.0 % for large-area PERC cells in mass production (210 mm) by Trina and others.

Efficiency under Standard Equipment / Bifacial Variation

23.39 % for a PERC cell manufactured with standard equipment, bifacial variant, 9 busbars, area ~ 252 cm².

Key Technical Characteristics

Spec

Typical / Example Value 

Wafer Size

210 mm × 210 mm (some large-area cells.

Cell Type

P-type monocrystalline silicon, PERC structure with rear passivation, advanced AR coatings, super multi-busbar (MBB) designs.

Metallization

Ultra-fine metallization fingers, multiple busbars to reduce series resistance.

Anti-Reflection Coating (ARC)

Multi-layer AR coatings used to reduce front-surface reflection, improving light trapping.

Temperature Behavior & Degradation

— Temperature Coefficient (Pmax): Expected negative coefficient, usually somewhat worse than TOPCon/HJT but acceptable in many climates (often around -0.30 to -0.38 %/°C for P-type PERC large-area cells) based on historical trends.

— Light Induced Degradation (LID): PERC cells (especially P-type) suffer more LID due to boron–oxygen defects. Many manufacturers take steps to mitigate this via material purity, optimized passivation, pre-conditioning

Trade-offs and Limitations

— Efficiency improvements are becoming incremental: recent advances are greater for TOPCon, HJT in many cases. PERC is getting closer to its practical limits in large-area industrial manufacture.

— Degradation (LID / potential-induced degradation) is still an issue for P-type PERC cells, though mitigations improve the lifetime.

— Temperature performance: less favorable than some newer technologies (HJT, TOPCon) in very high-heat operating environments.

— Rear-side reflection and bifacial gains are possible only if the PERC cell design is adapted (grid pattern or transparent back contact) — standard PERC cells often only produce from front side.

Product Characteristics

Dimensions

156.75×156.75 mm

158.75×158.75 mm

166×166 mm

182×182 mm

182×183.75 mm

210×210 mm

Maximum Power (Pmax)

2.52 W – 10.364 W

Cell Thickness

180 ± 18 µm, 160 ± 20 µm

Front Surface (-)

No. of Busbars

2,3,4,5,9,10,11,12

Busbar Width

0.8 mm – 0.04±0.02 mm

Back Surface

No. of Soldering Pads

2,3,4,5,9,10,11,12

Soldering Pad Width

1.6 mm, 1.8±0.3 mm, 0.6±0.1 mm

Soldering Pad Material

 Silver – Aluminum

Electrical Data at STC

Cell Efficiency (Maximum)

23.50%

Voltage at Maximum Power Point (Vmpp)

0.561 V – 0.6 V

Current at Maximum Power Point (Impp)

4.486 A – 17.273 A

Open Circuit Voltage (Voc)

0.66 V – 0.6983 V

Short Circuit Current (Isc)

4.772 A – 18.052 A

Fill Factor (FF)

79.9 % – 82.22 %

Thermal Ratings

Temperature Coefficient of Pmax

(-0.38 %/˚C), ( -0.44 %/˚C)

Temperature Coefficient of Voc

(-0.36 %/˚C), (-0.32 %/˚C)

Temperature Coefficient of Isc

(0.07 %/˚C), (0.36 %/˚C)

Examples of specifications for some types of PERC Solar Cells

M166 9BB Mono PERC Cell

Product Characteristics

Model No.

6.11

6.17

6.22

6.28

6.33

6.39

Product Characteristics

Cell Technology

PERC

Dimensions

166×166 mm

Cell Thickness

170 ± 20 µm

Front Surface (-)

No. of Busbars

9

Busbar Width

0.1±0.03 mm

Busbar Material

Silver

Anti Reflection Coating

Silicon nitride

Back Surface (+)

No. of Soldering Pads 

9

Soldering Pad Width

1.3±0.25 mm

Soldering Pad Material

Silver

Back Surface Field (BSF)

Aluminium

Electrical Data at STC

Maximum Power (Pmax)

6.11 W

6.17 W

6.22 W

6.28 W

6.33 W

6.39 W

Voltage at Maximum Power Point (Vmpp)

0.5779 V

0.5811 V

0.5843 V

0.5871 V

0.5901 V

0.5927 V

Current at Maximum Power Point (Impp)

10.579 A

10.615 A

10.65 A

10.69 A

10.727 A

10.799 A

Open Circuit Voltage (Voc)

0.6811 V

0.6835 V

0.6856 V

0.6881 V

0.6905 V

0.6929 V

Short Circuit Current (Isc)

11.128 A

11.158 A

11.187 A

11.216 A

11.246 A

11.284 A

Cell Efficiency

22.3 %

22.5 %

22.7 %

22.9 %

23.1 %

23.3 %

Fill Factor (FF)

80.66 %

80.88 %

81.13 %

81.32 %

81.52 %

81.86 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.38 %/˚C

Temperature Coefficient of Voc

-0.36 %/˚C

Temperature Coefficient of Isc

0.07 %/˚C

SR-10B182MPERC-B

Product Characteristics

Model No.

7.36

740

7.43

7.46

7.49

7.53

Product Characteristics

Cell Technology

PERC

Dimensions

182×182 mm

Diagonal

245±0.25 mm

Cell Thickness

160 ± 16 µm

Front Surface (-)

No. of Busbars

10

Busbar Width

0.06±0.03 mm

Anti Reflection
Coating

Silicon nitride

Electrical Data at STC

Maximum Power (Pmax)

7.36 W

7.4 W

7.43 W

7.46 W

7.49 W

7.53 W

Voltage at Maximum Power Point (Vmpp)

0.581 V

0.583 V

0.585 V

0.587 V

0.589 V

0.591 V

Current at Maximum Power Point (Impp)

12.668 A

12.693 A

12.701 A

12.709 A

12.718 A

12.743 A

Open Circuit Voltage (Voc)

0.676 V

0.677 V

0.678 V

0.679 V

0.68 V

0.681 V

Short Circuit Current (Isc)

13.491 A

13.508 A

13.516 A

13.529 A

13.539 A

13.549 A

Cell Efficiency

22.30-22.40 %

22.40-22.50 %

22.50-22.60 %

22.60-22.70 %

22.70-22.80 %

22.80-22.90 %

Fill Factor (FF)

80.71 %

80.92 %

81.08 %

81.21 %

81.36 %

81.61 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.36 %/˚C

Temperature Coefficient of Voc

-0.36 %/˚C

Temperature Coefficient of Isc

0.04 %/˚C

PERC M182 10BB

Product Characteristics

Model No.

PERC M182 10BB

EvoCell-182B

Product Characteristics

Cell Technology

PERC

Dimensions

182×182 mm

Diagonal

247±0.5 mm

Cell Thickness

175/180 ± 20 µm

Front Surface (-)

No. of Busbars

10

Busbar Width

1.2±0.3 mm

Busbar Material

Aluminium

Anti Reflection Coating

Silicon nitride

Back Surface (+)

No. of Soldering Pads

10

Soldering Pad Width

1.2±0.3 mm

Soldering Pad Material

Aluminium

Back Surface Field (BSF)

Aluminium

Electrical Data at STC

Maximum Power (Pmax)

7.69 W

7.76 W

Voltage at Maximum Power Point (Vmpp)

0.613 V

0.593 V

Current at Maximum Power Point (Impp)

12.539 A

13.086 A

Open Circuit Voltage (Voc)

0.69 V

0.692 V

Short Circuit Current (Isc)

13.583 A

13.776 A

Cell Efficiency

22.3-23.3 %

22.1-23.5 %

Fill Factor (FF)

82.01 %

81.4 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.39 %/˚C

Temperature Coefficient of Voc

-0.3 %/˚C

Temperature Coefficient of Isc

0.06 %/˚C

G1-PERC Cell

Product Characteristics

Model No.

5.42

5.44

5.47

5.49

5.52

5.54

5.57

5.59

Product Characteristics

Cell Technology

PERC

Dimensions

158.75×158.75 mm

Cell Thickness

160 ± 20 µm

Front Surface (-)

No. of Busbars

5

Back Surface (+)

No. of Soldering Pads

5

Soldering Pad Width

1.6±0.05 mm

Electrical Data at STC

Maximum Power (Pmax)

5.42 W

5.44 W

5.47 W

5.49 W

5.52 W

5.54 W

5.57 W

5.59 W

Voltage at Maximum Power Point (Vmpp)

0.565 V

0.566 V

0.568 V

0.569 V

0.571 V

0.573 V

0.575 V

0.577 V

Current at Maximum Power Point (Impp)

9.59 A

9.61 A

9.63 A

9.65 A

9.67 A

9.67 A

9.69 A

9.69 A

Open Circuit Voltage (Voc)

0.67 V

0.671 V

0.672 V

0.673 V

0.674 V

0.675 V

0.676 V

0.677 V

Short Circuit Current (Isc)

10.14 A

10.14 A

10.16 A

10.17 A

10.18 A

10.18 A

10.19 A

10.19 A

Cell Efficiency

21.5 %

21.6 %

21.7 %

21.8 %

21.9 %

22 %

22.1 %

22.2 %

Fill Factor (FF)

79.75 %

79.94 %

80.11 %

80.22 %

80.47 %

80.64 %

80.89 %

81.05 %

166M-9BB

Product Characteristics

Model No.

5.89

5.92

5.95

5.98

6

6.03

6.06

6.09

6.11

Product Characteristics

Cell Technology

PERC

Dimensions

166×166 mm

Cell Thickness

190 ± 30 µm

Front Surface (-)

No. of Busbars

9

Busbar Width

0.1±0.03 mm

Busbar Material

Silver

Anti Reflection Coating

Silicon nitride

Back Surface (+)

No. of Soldering Pads

9

Soldering Pad Width

1.3±0.25 mm

Soldering Pad Material

Silver

Back Surface Field (BSF)

Aluminium

Electrical Data at STC

Maximum Power (Pmax)

5.89 W

5.92 W

5.95 W

5.98 W

6 W

6.03 W

6.06 W

6.09 W

6.11 W

Voltage at Maximum Power Point (Vmpp)

0.5684 V

0.5701 V

0.572 V

0.5742 V

0.576 V

0.5781 V

0.5799 V

0.5817 V

0.5835 V

Current at Maximum Power Point (Impp)

10.371 A

10.386 A

10.401 A

10.409 A

10.424 A

10.433 A

10.448 A

10.462 A

10.477 A

Open Circuit Voltage (Voc)

0.6713 V

0.6719 V

0.6729 V

0.6743 V

0.6748 V

0.6774 V

0.6777 V

0.678 V

0.679 V

Short Circuit Current (Isc)

10.958 A

10.974 A

10.99 A

10.996 A

11.014 A

11.021 A

11.039 A

11.046 A

11.06 A

Cell Efficiency

21.5 %

21.6 %

21.7 %

21.8 %

21.9 %

22 %

22.1 %

22.2 %

22.3 %

Fill Factor (FF)

80.12 %

80.3 %

80.45 %

80.6 %

80.79 %

80.81 %

80.98 %

81.26 %

81.41 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.38 %/˚C

Temperature Coefficient of Voc

-0.36 %/˚C

Temperature Coefficient of Isc

0.07 %/˚C

Mono PERC Bifacial – Acidic Rear Side Polishing

Product Characteristics

Model No.

22.00L7.36W
I1

22.10L7.40W
I1

22.20L7.43W
I1

22.30L7.46W
I1

22.40L7.50W
I1

22.50L7.53W
I1

22.60L7.56W
I1

22.70L7.60W
I1

Product Characteristics

Cell Technology

PERC

Dimensions

182×183.75 mm

Diagonal

256±0.5 mm

Cell Thickness

166 ± 16 µm

Front Surface (-)

No. of Busbars

9

Busbar Width

0.10±0.05 mm

Busbar Material

Silver

Anti Reflection Coating

Silicon nitride

Back Surface (+)

No. of Soldering Pads

12

Soldering Pad Material

Silver

Back Surface Field (BSF)

Aluminium

Electrical Data at STC

Maximum Power (Pmax)

7.36 W

7.4 W

7.43 W

7.46 W

7.5 W

7.53 W

7.56 W

7.6 W

Voltage at Maximum Power Point (Vmpp)

0.572 V

0.574 V

0.576 V

0.578 V

0.58 V

0.582 V

0.583 V

0.585 V

Current at Maximum Power Point (Impp)

12.871 A

12.888 A

12.898 A

12.908 A

12.925 A

12.939 A

12.959 A

12.986 A

Open Circuit Voltage (Voc)

0.671 V

0.672 V

0.674 V

0.675 V

0.676 V

0.677 V

0.678 V

0.68 V

Short Circuit Current (Isc)

13.605 A

13.647 A

13.652 A

13.672 A

13.693 A

13.7 A

13.716 A

13.741 A

Cell Efficiency

22-22.1 %

22.1-22.2 %

22.2-22.3 %

22.3-22.4 %

22.4-22.5 %

22.5-22.6 %

22.6-22.7 %

22.7-22.8 %

Fill Factor (FF)

80.65 %

80.67 %

80.74 %

80.84 %

80.99 %

81.19 %

81.24 %

81.3 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.32 %/˚C

Temperature Coefficient of Voc

-0.259 %/˚C

Temperature Coefficient of Isc

0.041 %/˚C