HJT Solar Cell Detailed Specifications

Cell Type / Structure

–

N-type crystalline silicon (c-Si) wafer with intrinsic and doped amorphous silicon layers (a-Si:H) on both sides, plus transparent conductive oxide (TCO) layer such as ITO

Efficiency

–

Commercial HJT cells typically achieve 22–26% efficiency. Record lab cells have exceeded 26%.

Dimensions & Thickness

–

Common cell sizes: 210.1 × 105.05 mm ±0.15 mm or 158.75 × 158.75 mm.

–

Wafer thickness: ~110 µm (+20/−10 µm).

Electrical Characteristics (STC)

–

Vmpp ≈ 0.676–0.685 V

–

Impp ≈ 8.33–8.43 A

–

Voc ≈ 0.75 V

–

Typical cell power ≈ 5.6–5.8 Wp

Temperature Coefficients

–

Pmax: −0.24 to −0.27 %/°C

–

Voc: ≈ −0.25 %/°C

–

Isc: ≈ +0.04 %/°C

Bifaciality & Low-Light Performance

–

Bifaciality factor ≥ 80%, providing additional energy yield from rear-side illumination.

–

Excellent low-light performance, maintaining high efficiency under cloudy conditions.

Degradation & Lifetime

–

Very low annual degradation (≈ 0.3–0.5% per year).

–

Expected lifetime: 25–30 years with ≥ 85–90% retained power output.

Manufacturing & Materials

–

Front/back contacts use silver paste with 9-busbar design common.

–

Anti-reflection coating (ARC) for maximum light absorption.

System Ratings

–

Maximum system voltage: 1500 V DC

–

Operating temperature range: −40 °C to +85 °C

Product Characteristics

Dimensions

156.75×156.75 mm

158.75×158.75 mm

166×166 mm

182×182 mm

210×105 mm

210×210 mm

Maximum Power (Pmax)

0.36 W – 11.03 W

Cell Thickness

130 ± 15 µm – 130 ± 20 µm

140 ± 14 µm – 150 ± 30 µm

Front Surface (-)

No. of Busbars

2,5,10,12, 18, 20

Busbar Width

0.03±0.015 mm – 1.2 mm – 0.036±0.02 mm

Back Surface

No. of Soldering Pads

2,5,10,12, 18, 20

Soldering Pad Width

0.030±0.02 mm – 0.03±0.015 mm -1.6 mm

Soldering Pad Material

 Silver – Aluminum

Electrical Data at STC

Cell Efficiency (Maximum)

23% – 25%

Voltage at Maximum Power Point (Vmpp)

0.583 V – 0.627 V

Current at Maximum Power Point (Impp)

15.3306 A – 17.601 A

Short Circuit Current (Isc)

15.952 A – 18.332 A

Fill Factor (FF)

83.15 % – 88.05 %

Thermal Ratings

Temperature Coefficient of Pmax

(-0.29 %/˚C) – (-0.32 %/˚C)

Temperature Coefficient of Voc

(-0.25 %/˚C)- (-0.3 %/˚C)

Temperature Coefficient of Isc

0.045 %/˚C – 0.04 %/˚C

Examples of specifications for some types of HJT Solar Cells

HJT 166 12BB & HJT 210 15BB

Product Characteristics

Model No.

HJT 166 12BB

HJT 210 15BB

Product Characteristics

Cell Technology

HJT

Dimensions

166×166 mm

210×210 mm

Cell Thickness

140 ± 14 µm

130 ± 20 µm

Front Surface (-)

No. of Busbars

12

—

Busbar Width

2 mm

—

Busbar Material

Silver

Anti Reflection Coating

Silicon nitride

Back Surface (+)

No. of Soldering Pads

12

—

Soldering Pad Width

2 mm

—

Soldering Pad Material

Silver

Back Surface Field (BSF)

Aluminium

Electrical Data at STC

Maximum Power (Pmax)

6.77 W

5.56 W

Open Circuit Voltage (Voc)

0.743 V

0.746 V

Short Circuit Current (Isc)

10.75 A

8.72 A

Cell Efficiency

24-24.7 %

24.5-25.2 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.26 %/˚C

-0.26 %/˚C

Temperature Coefficient of Voc

-0.27 %/˚C

-0.27 %/˚C

Temperature Coefficient of Isc

0.055 %/˚C

0.055 %/˚C

HJT 210-18BB/20BB

Product Characteristics

Model No.

24.5

24.6

24.7

24.8

24.9

25.0

25.1

25.2

Product Characteristics

Cell Technology

HJT

Dimensions

210×210 mm

Diagonal

295±0.5 mm

Cell Thickness

130 ± 30 µm

Front Surface (-)

Busbar Width

0.06±0.02 mm

Back Surface (+)

Soldering Pad Width

0.06±0.02 mm

Electrical Data at STC

Maximum Power (Pmax)

5.4 W

5.42 W

5.45 W

5.47 W

5.49 W

5.51 W

5.53 W

5.56 W

Voltage at Maximum Power Point (Vmpp)

0.667 V

0.668 V

0.669 V

0.67 V

0.671 V

0.672 V

0.673 V

0.674 V

Current at Maximum Power Point (Impp)

8.096 A

8.114 A

8.147 A

8.176 A

8.193 A

8.216 A

8.223 A

8.245 A

Open Circuit Voltage (Voc)

0.7472 V

0.7474 V

0.7476 V

0.7478 V

0.7482 V

0.7484 V

0.7487 V

0.749 V

Short Circuit Current (Isc)

8.614 A

8.622 A

8.635 A

8.642 A

8.653 A

8.654 A

8.66 A

8.673 A

Cell Efficiency

24.5-24.6 %

24.6-24.7 %

24.7-24.8 %

24.8-24.9 %

24.9-25.0 %

25.0-25.1 %

25.1-25.2 %

25.2-25.3 %

Fill Factor (FF)

83.9 %

84.11 %

84.43 %

84.76 %

84.91 %

85.25 %

85.35 %

85.55 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.26 %/˚C

Temperature Coefficient of Voc

-0.27 %/˚C

Temperature Coefficient of Isc

0.055 %/˚C

G12-0BB HJT Solar Cell

Product Characteristics

Model No.

G12-0BB HJT Solar Cell

Product Characteristics

Cell Technology

HJT

Dimensions

210×210 mm

Cell Thickness

120 µm

Front Surface (-)

Busbar Material

Silver

Electrical Data at STC

Maximum Power (Pmax)

5.47 W

Voltage at Maximum Power Point (Vmpp)

0.673 V

Current at Maximum Power Point (Impp)

8.123 A

Open Circuit Voltage (Voc)

0.7482 V

Short Circuit Current (Isc)

8.711 A

Cell Efficiency

25-25.5 %

Fill Factor (FF)

83.89 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.26 %/˚C

Temperature Coefficient of Voc

-0.27 %/˚C

Temperature Coefficient of Isc

0.055 %/˚C

Bifacial G12 18BB HJT Solar cell & Bifacial 20BB HJT Solar cell

Product Characteristics

Model No.

Bifacial G12 18BB HJT Solar cell

Bifacial 20BB HJT Solar cell

Product Characteristics

Cell Technology

HJT

Dimensions

210×210 mm

Cell Thickness

110 ± 15 µm

120 ± 15 µm

Front Surface (-)

Busbar Width

0.08 mm

—

Busbar Material

Silver

Anti Reflection Coating

Silicon nitride

—

Back Surface (+)

Soldering Pad Material

Silver

Soldering Pad Width

—

0.04 mm

Electrical Data at STC

Maximum Power (Pmax)

5.62 W

5.62 W

Voltage at Maximum Power Point (Vmpp)

0.677 V

0.677 V

Current at Maximum Power Point (Impp)

8.307 A

8.307 A

Open Circuit Voltage (Voc)

0.75 V

0.75 V

Short Circuit Current (Isc)

8.695 A

8.695 A

Cell Efficiency

24-25.5 %

24-25 %

Fill Factor (FF)

86.24 %

86.24 %

JGYC-182-16BB

Product Characteristics

Model No.

4.01

4.03

4.04

4.06

4.08

4.09

4.11

Product Characteristics

Cell Technology

HJT

Dimensions

182×182 mm

Cell Thickness

130 ± 10 µm

Front Surface (-)

Busbar Width

0.04 mm

Busbar Material

Silver

Back Surface (+)

Soldering Pad Width

0.04 mm

Electrical Data at STC

Maximum Power (Pmax)

4.01 W

4.03 W

4.04 W

4.06 W

4.08 W

4.09 W

4.11 W

Open Circuit Voltage (Voc)

0.747 V

0.748 V

0.748 V

0.748 V

0.748 V

0.748 V

0.748 V

Short Circuit Current (Isc)

6.511 A

6.504 A

6.507 A

6.509 A

6.511 A

6.513 A

6.516 A

Cell Efficiency

24.3 %

24.4 %

24.5 %

24.6 %

24.7 %

24.8 %

24.9 %

Fill Factor (FF)

Thermal Ratings

Temperature Coefficient of Pmax

-0.254 %/˚C

Temperature Coefficient of Voc

-0.243 %/˚C

Temperature Coefficient of Isc

0.033 %/˚C

JGYC-210-18BB

Product Characteristics

Model No.

5.49

5.51

5.53

5.56

5.58

5.61

5.63

Product Characteristics

Cell Technology

HJT

Dimensions

210×210 mm

Cell Thickness

130 ± 10 µm

Front Surface (-)

Busbar Width

0.04 mm

Busbar Material

Silver

Back Surface (+)

Soldering Pad Width

0.04 mm

Soldering Pad Material

Silver

Electrical Data at STC

Maximum Power (Pmax)

5.49 W

5.51 W

5.53 W

5.56 W

5.58 W

5.61 W

5.63 W

Voltage at Maximum Power Point (Vmpp)

0.683 V

0.686 V

0.689 V

0.691 V

0.694 V

0.696 V

0.698 V

Current at Maximum Power Point (Impp)

8.053 A

8.054 A

8.054 A

8.057 A

8.058 A

8.066 A

8.073 A

Open Circuit Voltage (Voc)

0.7488 V

0.7489 V

0.749 V

7493 V

0.7497 V

0.7498 V

0.7501 V

Short Circuit Current (Isc)

8.519 A

8.52 A

8.52 A

8.521 A

8.524 A

8.525 A

8.528 A

Cell Efficiency

24.9 %

25 %

25.1 %

25.2 %

25.3 %

25.4 %

25.5 %

Fill Factor (FF)

86.23 %

86.52 %

86.89 %

87.21 %

87.4 %

87.79 %

88.07 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.254 %/˚C

Temperature Coefficient of Voc

-0.243 %/˚C

Temperature Coefficient of Isc

0.033 %/˚C

JGYC-210-0BB

Product Characteristics

Model No.

5.65

5.68

5.7

5.72

5.75

5.77

5.79

Product Characteristics

Cell Technology

HJT

Dimensions

210×210 mm

Cell Thickness

130/120/110 ± 10 µm

Front Surface (-)

Busbar Material

Silver

Back Surface (+)

Soldering Pad Material

Silver

Electrical Data at STC

Maximum Power (Pmax)

5.65 W

5.68 W

5.7 W

5.72 W

5.75 W

5.77 W

5.79 W

Voltage at Maximum Power Point (Vmpp)

0.68 V

0.681 V

0.682 V

0.683 V

0.684 V

0.685 V

0.686 V

Current at Maximum Power Point (Impp)

8.309 A

8.32 A

8.331 A

8.342 A

8.353 A

8.364 A

8.375 A

Open Circuit Voltage (Voc)

0.752V

0.752 V

0.752 V

0.752 V

0.753 V

0.753 V

0.753 V

Short Circuit Current (Isc)

8.681 A

8.699 A

8.718 A

8.737 A

8.756 A

8.775 A

8.794 A

Cell Efficiency

25.60 %

25.7 %

25.8 %

25.9 %

26 %

26.1 %

26.2 %

Fill Factor (FF)

86.55 %

86.61 %

86.67 %

86.72 %

86.66 %

86.71 %

86.76 %

Thermal Ratings

Temperature Coefficient of Pmax

-0.254 %/˚C

Temperature Coefficient of Voc

-0.243 %/˚C

Temperature Coefficient of Isc

0.033 %/˚C